Infineon OptiMOS™ N-Channel MOSFET, 237 A, 120 V, 8-Pin HSOF-8 IPT030N12N3GATMA1

Bulk discount available

Subtotal (1 pack of 2 units)*

£8.50

(exc. VAT)

£10.20

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 1,878 unit(s) shipping from 06 October 2025
  • Plus 999,998,120 unit(s) shipping from 16 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
2 - 18£4.25£8.50
20 - 48£3.83£7.66
50 - 98£3.57£7.14
100 - 198£3.315£6.63
200 +£3.105£6.21

*price indicative

Packaging Options:
RS Stock No.:
236-3670
Mfr. Part No.:
IPT030N12N3GATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

237 A

Maximum Drain Source Voltage

120 V

Series

OptiMOS™

Package Type

HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.003 Ω

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

The Infineon OptiMOS power MOSFET is the ideal fit for battery-powered equipment, with optimal balance between additional voltage breakdown margin and low on-state resistance. It is used in light electric vehicle, low voltage drives and battery powered tools.

High power density and improved thermal management
Less board space needed
High system efficiency and less paralleling required

Related links