Infineon OptiMOS™ N-Channel MOSFET, 237 A, 120 V, 8-Pin HSOF-8 IPT030N12N3GATMA1

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Subtotal (1 pack of 2 units)*

£8.50

(exc. VAT)

£10.20

(inc. VAT)

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Per Pack*
2 - 18£4.25£8.50
20 - 48£3.83£7.66
50 - 98£3.57£7.14
100 - 198£3.315£6.63
200 +£3.105£6.21

*price indicative

Packaging Options:
RS Stock No.:
236-3670
Mfr. Part No.:
IPT030N12N3GATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

237 A

Maximum Drain Source Voltage

120 V

Series

OptiMOS™

Package Type

HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.003 Ω

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

The Infineon OptiMOS power MOSFET is the ideal fit for battery-powered equipment, with optimal balance between additional voltage breakdown margin and low on-state resistance. It is used in light electric vehicle, low voltage drives and battery powered tools.

High power density and improved thermal management
Less board space needed
High system efficiency and less paralleling required

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