Infineon OptiMOS™ N-Channel MOSFET, 237 A, 120 V, 8-Pin HSOF-8 IPT030N12N3GATMA1
- RS Stock No.:
- 236-3669
- Mfr. Part No.:
- IPT030N12N3GATMA1
- Brand:
- Infineon
Subtotal (1 reel of 2000 units)*
£4,160.00
(exc. VAT)
£5,000.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 16 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
---|---|---|
2000 + | £2.08 | £4,160.00 |
*price indicative
- RS Stock No.:
- 236-3669
- Mfr. Part No.:
- IPT030N12N3GATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 237 A | |
Maximum Drain Source Voltage | 120 V | |
Series | OptiMOS™ | |
Package Type | HSOF-8 | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 0.003 Ω | |
Maximum Gate Threshold Voltage | 4V | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 237 A | ||
Maximum Drain Source Voltage 120 V | ||
Series OptiMOS™ | ||
Package Type HSOF-8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 0.003 Ω | ||
Maximum Gate Threshold Voltage 4V | ||
Number of Elements per Chip 1 | ||
The Infineon OptiMOS power MOSFET is the ideal fit for battery-powered equipment, with optimal balance between additional voltage breakdown margin and low on-state resistance. It is used in light electric vehicle, low voltage drives and battery powered tools.
High power density and improved thermal management
Less board space needed
High system efficiency and less paralleling required
Less board space needed
High system efficiency and less paralleling required
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