N-Channel MOSFET, 237 A, 120 V, 8-Pin HSOF-8 Infineon IPT030N12N3GATMA1
- RS Stock No.:
- 236-3669
- Mfr. Part No.:
- IPT030N12N3GATMA1
- Brand:
- Infineon
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Added
Price Each (On a Reel of 2000)
£1.932
(exc. VAT)
£2.318
(inc. VAT)
| Units | Per unit | Per Reel* |
| 2000 + | £1.932 | £3,864.00 |
| *price indicative | ||
- RS Stock No.:
- 236-3669
- Mfr. Part No.:
- IPT030N12N3GATMA1
- Brand:
- Infineon
Technical Reference
Legislation and Compliance
Product Details
The Infineon OptiMOS power MOSFET is the ideal fit for battery-powered equipment, with optimal balance between additional voltage breakdown margin and low on-state resistance. It is used in light electric vehicle, low voltage drives and battery powered tools.
High power density and improved thermal management
Less board space needed
High system efficiency and less paralleling required
Less board space needed
High system efficiency and less paralleling required
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 237 A |
| Maximum Drain Source Voltage | 120 V |
| Series | OptiMOS |
| Package Type | HSOF-8 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 0.003 Ω |
| Maximum Gate Threshold Voltage | 4V |
| Number of Elements per Chip | 1 |
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