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Infineon CoolMOS Type N-Channel MOSFET, 15 A, 700 V, 3-Pin TO-220 IPP65R155CFD7XKSA1

RS Stock No.:: 236-3666
Mfr. Part No.:: IPP65R155CFD7XKSA1
Brand:: Infineon

Infineon CoolMOS Type N-Channel MOSFET, 15 A, 700 V, 3-Pin TO-220 IPP65R155CFD7XKSA1

Bulk discount available

Subtotal (1 pack of 5 units)*

£13.85

(exc. VAT)

£16.60

(inc. VAT)

FREE delivery for orders over £50.00

Last RS stock

Final 440 unit(s), ready to ship

Units	Per unit	Per Pack*
5 - 20	£2.77	£13.85
25 - 45	£2.494	£12.47
50 - 120	£2.326	£11.63
125 - 245	£2.188	£10.94
250 +	£2.022	£10.11

*price indicative

RS Stock No.:: 236-3666
Mfr. Part No.:: IPP65R155CFD7XKSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	15A
	Maximum Drain Source Voltage Vds	700V
	Package Type	TO-220
	Series	CoolMOS
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	155mΩ
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	28nC
	Forward Voltage Vf	1V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	77W
	Maximum Operating Temperature	175°C
	Length	10.36mm
	Width	4.57 mm
	Height	9.45mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 15A
	Maximum Drain Source Voltage Vds 700V
	Package Type TO-220
	Series CoolMOS
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 155mΩ
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 28nC
	Forward Voltage Vf 1V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 77W
	Maximum Operating Temperature 175°C
	Length 10.36mm
	Width 4.57 mm
	Height 9.45mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPP65R155CFD7XKSA1

The Infineon CoolMOS super junction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies. It is ideally suited for industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. It has drain current of 15 A.

Excellent hard-commutation ruggedness

Extra safety margin for designs with increased bus voltage

Enabling increased power density

Outstanding light-load efficiency in industrial SMPS applications

Improved full-load efficiency in industrial SMPS applications

Price competitiveness compared to alternative offerings in the market