Renesas Silicon N-Channel MOSFET, 25 A, 60 V, 4-Pin LFPAK, SOT-669 RJK0651DPB-00#J5

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Subtotal 50 units (supplied on a continuous strip)*

£48.40

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£58.10

(inc. VAT)

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50 - 95£0.968
100 - 245£0.83
250 - 995£0.812
1000 +£0.72

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Packaging Options:
RS Stock No.:
234-7155P
Mfr. Part No.:
RJK0651DPB-00#J5
Brand:
Renesas Electronics
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Brand

Renesas Electronics

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

60 V

Package Type

LFPAK, SOT-669

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

0.014 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Number of Elements per Chip

1

Transistor Material

Silicon

The Renesas Electronics N-channel single power MOSFET suitable for switching and load switch applications. It has high breakdown voltage of 60 V. It is capable of 4.5 V gate drive.

High speed switching
Low drive current
High density mounting
Low on-resistance
Pb-free
Halogen-free