Infineon ISC Type N-Channel MOSFET, 193 A, 40 V, 8-Pin TDSON-8 FL ISC017N04NM5ATMA1

Bulk discount available

Subtotal (1 pack of 5 units)*

£7.95

(exc. VAT)

£9.55

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 9,800 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
5 - 45£1.59£7.95
50 - 120£1.306£6.53
125 - 245£1.222£6.11
250 - 495£1.146£5.73
500 +£1.064£5.32

*price indicative

Packaging Options:
RS Stock No.:
234-6995
Mfr. Part No.:
ISC017N04NM5ATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

193A

Maximum Drain Source Voltage Vds

40V

Package Type

TDSON-8 FL

Series

ISC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.7mΩ

Typical Gate Charge Qg @ Vgs

67nC

Maximum Power Dissipation Pd

115W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

4.4mm

Standards/Approvals

No

Height

3.8mm

Width

1.1 mm

Automotive Standard

No

The Infineon OptiMOS 5 power transistor N-channel MOSFET has 40V drain source breakdown voltage and 193A continuous drain current. This product offers a Benchmark solution for applications requiring normal level (higher threshold voltage) drive capability. The high Vth in the normal level portfolio offers immunity to false turn-on due to noisy environments. In addition, lower QGD/QGS ratios reduce the Peak of the gate voltage spikes, further contributing to the robustness against unwanted turn-on.

Battery powered application

LV motor drives

Very low on-resistanceRDS(on)

100% avalanche tested

175°C junction temperature

Superior thermal resistance

Low gate charge

Reduced switching losses

Suitable for operation at higher frequencies

N-channel

Pb-free lead plating

RoHS compliant

Halogen-free according to IEC61249-2-21

Related links