Infineon BSZ Type N-Channel MOSFET, 40 A, 100 V N, 8-Pin TSDSON-8 FL BSZ0803LSATMA1

Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
234-6990
Mfr. Part No.:
BSZ0803LSATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

100V

Package Type

TSDSON-8 FL

Series

BSZ

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

20.8mΩ

Channel Mode

N

Maximum Power Dissipation Pd

52W

Typical Gate Charge Qg @ Vgs

7.6nC

Forward Voltage Vf

1.1V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

5.35mm

Height

1.2mm

Standards/Approvals

No

Width

6.1 mm

Automotive Standard

No

The Infineon OptiMOS™ PD N-channel power MOSFET targets USB-PD and adapter applications. The product offers fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction and features quality products in compact, lightweight packages. It has 40A maximum continuous drain current and 100V maximum drain source voltage It is Ideal for high-frequency switching and optimized for chargers.

Logic level availability

Low on-state resistance RDS(on)

Low gate, output and reverse recovery charge

Excellent thermal behaviour

100% avalanche tested

Pb-free lead plating

Halogen-freeaccordingtoIEC61249-2-21

RoHS compliant

Available in 2 small standard packages

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