Infineon BSC Type N-Channel MOSFET, 114 A, 150 V N, 8-Pin SuperSO8 5 x 6 BSC074N15NS5ATMA1

RS Stock No.:: 234-6989
Mfr. Part No.:: BSC074N15NS5ATMA1
Brand:: Infineon

Infineon BSC Type N-Channel MOSFET, 114 A, 150 V N, 8-Pin SuperSO8 5 x 6 BSC074N15NS5ATMA1

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Subtotal (1 pack of 2 units)*

£8.38

(exc. VAT)

£10.06

(inc. VAT)

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In Stock

Plus 4,926 unit(s) shipping from 29 December 2025

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Units	Per unit	Per Pack*
2 - 8	£4.19	£8.38
10 - 18	£3.685	£7.37
20 - 48	£3.435	£6.87
50 - 98	£3.225	£6.45
100 +	£2.975	£5.95

*price indicative

RS Stock No.:: 234-6989
Mfr. Part No.:: BSC074N15NS5ATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	114A
	Maximum Drain Source Voltage Vds	150V
	Series	BSC
	Package Type	SuperSO8 5 x 6
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	9.2mΩ
	Channel Mode	N
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	10nC
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	46W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	5.35mm
	Height	1.2mm
	Width	6.1 mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 114A
	Maximum Drain Source Voltage Vds 150V
	Series BSC
	Package Type SuperSO8 5 x 6
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 9.2mΩ
	Channel Mode N
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 10nC
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 46W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 5.35mm
	Height 1.2mm
	Width 6.1 mm
	Automotive Standard No

The Infineon OptiMOS™ N- channel MOSFETs in SuperSO8 package extend OptiMOS™ 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance. The low reverse recovery charge (Qrr) improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort. It has 114A maximum continuous drain current and 150V maximum drain source voltage. It is Ideal for high-frequency switching and synchronous rectification.

Lowest RDS(on) enables highest power density and efficiency

Higher operating temperature rating to 175°C for increased reliability

Low RthJC for excellent thermal behaviour

Lower reverse recovery charge (Qrr)

Very low on-resistance RDS(on)

Very low reverse recovery charge(Qrr)

Pb-free lead plating

RoHS compliant