Infineon BSC Type N-Channel MOSFET, 381 A, 40 V N, 8-Pin SuperSO8 5 x 6 BSC146N10LS5ATMA1
- RS Stock No.:
- 241-9677
- Mfr. Part No.:
- BSC146N10LS5ATMA1
- Brand:
- Infineon
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Subtotal (1 pack of 5 units)*
£3.61
(exc. VAT)
£4.33
(inc. VAT)
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In Stock
- 3,465 unit(s) ready to ship
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £0.722 | £3.61 |
| 50 - 120 | £0.578 | £2.89 |
| 125 - 245 | £0.542 | £2.71 |
| 250 - 495 | £0.506 | £2.53 |
| 500 + | £0.47 | £2.35 |
*price indicative
- RS Stock No.:
- 241-9677
- Mfr. Part No.:
- BSC146N10LS5ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 381A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SuperSO8 5 x 6 | |
| Series | BSC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 381A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SuperSO8 5 x 6 | ||
Series BSC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon OptiMOS™ 5 N-channel logic level power MOSFET has 100 V drain source voltage (VDS) & 44 A drain current (ID). The power MOSFETs in logic level are highly suitable for charging, adapter and telecom applications. The devices low gate charge reduces switching losses without compromising conduction losses. Logic level MOSFETs allow operations at high switching frequencies and due to a low gate threshold voltage can be driven directly from microcontrollers.
Optimized for high performance SMPS ,e.g. sync. rec.
100% avalanche tested
Superior thermal resistance
N-channel, logic level
Pb-free lead plating
RoHScompliant
Halogen-free according to IEC61249-2-21
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