Infineon CoolSiC Silicon N-Channel MOSFET, 39 A, 650 V, 3-Pin TO-247 IMW65R048M1HXKSA1

Bulk discount available

Subtotal (1 tube of 30 units)*

£163.38

(exc. VAT)

£196.05

(inc. VAT)

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Units
Per unit
Per Tube*
30 - 30£5.446£163.38
60 - 60£5.174£155.22
90 +£4.847£145.41

*price indicative

RS Stock No.:
232-0389
Mfr. Part No.:
IMW65R048M1HXKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

39 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Series

CoolSiC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.064 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.7V

Transistor Material

Silicon

Number of Elements per Chip

1

The Infineon has SiC MOSFET delivering reliable and cost-effective performance in TO247 3-pin package. The CoolSiC MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device’s performance, robustness, and ease of use. The MOSFET 650V is built on a state-of-the-art trench semiconductor, optimized to allow no compromises in getting both the lowest losses in the application and the highest reliability in operation.

Low capacitances
Optimized switching behaviour at higher currents
Superior gate oxide reliability
Excellent thermal behaviour
Increased avalanche capability
Works with standard drivers

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