onsemi NTB01 N-Channel MOSFET, 75.4 A, 150 V, 3-Pin D2PAK NTB011N15MC
- RS Stock No.:
- 230-9077
- Mfr. Part No.:
- NTB011N15MC
- Brand:
- onsemi
Subtotal (1 reel of 800 units)*
£1,417.60
(exc. VAT)
£1,700.80
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 6,400 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
---|---|---|
800 + | £1.772 | £1,417.60 |
*price indicative
- RS Stock No.:
- 230-9077
- Mfr. Part No.:
- NTB011N15MC
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 75.4 A | |
Maximum Drain Source Voltage | 150 V | |
Series | NTB01 | |
Package Type | D2PAK (TO-263) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 0.0109 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4.5V | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 75.4 A | ||
Maximum Drain Source Voltage 150 V | ||
Series NTB01 | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.0109 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
The ON Semiconductor MOSFET - N-channel shielded gate power trench MOSFET which has drain to source voltage of 150 V.
Optimized Switching performance
Max RDS(on) = 10.9 mΩ at VGS = 10 V, ID = 75.4 A
Industrys Lowest Qrr and softest Body-Diode for superior low noise switching
50% Lower Qrr than other MOSFET Suppliers
High efficiency with lower switching spike and EMI
Lowers Switching Noise/EMI
Improved switching FOM particularly Qgd
100% UIL Tested
No need or less snubber
Max RDS(on) = 10.9 mΩ at VGS = 10 V, ID = 75.4 A
Industrys Lowest Qrr and softest Body-Diode for superior low noise switching
50% Lower Qrr than other MOSFET Suppliers
High efficiency with lower switching spike and EMI
Lowers Switching Noise/EMI
Improved switching FOM particularly Qgd
100% UIL Tested
No need or less snubber
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