onsemi NTB5D0N Type N-Channel MOSFET, 139 A, 150 V Enhancement, 3-Pin TO-263 NTB5D0N15MC
- RS Stock No.:
- 221-6694
- Mfr. Part No.:
- NTB5D0N15MC
- Brand:
- onsemi
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View bulk pricing optionsSubtotal (1 pack of 5 units)*
£21.48
(exc. VAT)
£25.775
(inc. VAT)
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- Plus 760 unit(s) shipping from 01 June 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £4.296 | £21.48 |
| 50 - 95 | £3.704 | £18.52 |
| 100 + | £3.21 | £16.05 |
*price indicative
- RS Stock No.:
- 221-6694
- Mfr. Part No.:
- NTB5D0N15MC
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 139A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TO-263 | |
| Series | NTB5D0N | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 214W | |
| Typical Gate Charge Qg @ Vgs | 75nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Height | 15.88mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 139A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TO-263 | ||
Series NTB5D0N | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 214W | ||
Typical Gate Charge Qg @ Vgs 75nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Height 15.88mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ON Semiconductor 150V of power MOSFET used 139 A of drain current used with single N−channel. It produced using an advanced power trench process that incorporates shielded gate technology. It has industry lowest Qrr and softest body-diode for superior low noise switching.
Max RDS(on) 5.0 m at VGS at 10V
50% lower Qrr than other MOSFET suppliers
Lowers switching noise/EMI
100% UIL tested
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