onsemi NTMFS Type N-Channel MOSFET, 61 A, 80 V N, 8-Pin DFN
- RS Stock No.:
- 229-6474
- Mfr. Part No.:
- NTMFSC010N08M7
- Brand:
- onsemi
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 229-6474
- Mfr. Part No.:
- NTMFSC010N08M7
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 61A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | DFN | |
| Series | NTMFS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 78.1W | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.25mm | |
| Width | 0.95 mm | |
| Standards/Approvals | No | |
| Height | 5.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 61A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type DFN | ||
Series NTMFS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 78.1W | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 6.25mm | ||
Width 0.95 mm | ||
Standards/Approvals No | ||
Height 5.1mm | ||
Automotive Standard No | ||
The ON Semiconductor N-Channel MOSFET is produced using an advanced power trench process. advancements in both silicon and dual cool package technologies have been combined to offer the lowest on state resistance while maintaining excellent switching performance by extremely low junction to ambient thermal resistance.
Improved package thermal capability
Reduces conduction loss
Improved system efficiency
Package material comply with latest requirements
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