onsemi SiC Power SiC N-Channel MOSFET, 46 A, 650 V, 4-Pin TO-247-4 NTH4L060N090SC1
- RS Stock No.:
- 229-6463P
- Mfr. Part No.:
- NTH4L060N090SC1
- Brand:
- onsemi
Subtotal 1 unit (supplied in a tube)*
£9.40
(exc. VAT)
£11.28
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 228 unit(s), ready to ship
Units | Per unit |
|---|---|
| 1 + | £9.40 |
*price indicative
- RS Stock No.:
- 229-6463P
- Mfr. Part No.:
- NTH4L060N090SC1
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 46 A | |
| Maximum Drain Source Voltage | 650 V | |
| Series | SiC Power | |
| Package Type | TO-247-4 | |
| Mounting Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 0.084 Ω | |
| Maximum Gate Threshold Voltage | 4.3V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | SiC | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 46 A | ||
Maximum Drain Source Voltage 650 V | ||
Series SiC Power | ||
Package Type TO-247-4 | ||
Mounting Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 0.084 Ω | ||
Maximum Gate Threshold Voltage 4.3V | ||
Number of Elements per Chip 1 | ||
Transistor Material SiC | ||
The ON Semiconductor SiC Power series MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.
Highest efficiency
Faster operation frequency
Increased power density
Reduced EMI
Reduced system size
Faster operation frequency
Increased power density
Reduced EMI
Reduced system size