onsemi SUPERFET III Type N-Channel MOSFET, 10 A, 650 V N, 3-Pin TO-252 NTD360N65S3H

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5 - 45£2.06£10.30
50 - 95£1.776£8.88
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Packaging Options:
RS Stock No.:
229-6453
Mfr. Part No.:
NTD360N65S3H
Brand:
onsemi
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Brand

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

10A

Maximum Drain Source Voltage Vds

650V

Series

SUPERFET III

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

360mΩ

Channel Mode

N

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

17.5nC

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

83W

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

6.73mm

Height

6.22mm

Width

2.39 mm

Automotive Standard

No

Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 10 A, 360 mΩ, DPAK


SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III FAST MOSFET series helps minimize various power systems and improve system efficiency.

Features


• 700 V @ TJ = 150°C

• Ultra Low Gate Charge (Typ. Qg = 17.5 nC)

• Low Effective Output Capacitance (Typ. Coss(eff.) = 180 pF)

• Fast switching performance with robust body diode

• 100% Avalanche Tested

• RoHS Compliant

• Typ. RDS(on) = 296 m

• Internal Gate Resistance: 0.9

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