onsemi SUPERFET III N-Channel MOSFET, 10 A, 650 V, 3-Pin DPAK NTD360N65S3H

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Subtotal (1 reel of 2500 units)*

£2,107.50

(exc. VAT)

£2,530.00

(inc. VAT)

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  • Plus 999,985,000 unit(s) shipping from 19 February 2026
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2500 +£0.843£2,107.50

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RS Stock No.:
229-6452
Mfr. Part No.:
NTD360N65S3H
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

650 V

Package Type

DPAK (TO-252)

Series

SUPERFET III

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.36 Ω

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 10 A, 360 mΩ, DPAK


SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III FAST MOSFET series helps minimize various power systems and improve system efficiency.

Features


• 700 V @ TJ = 150°C
• Ultra Low Gate Charge (Typ. Qg = 17.5 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 180 pF)
• Fast switching performance with robust body diode
• 100% Avalanche Tested
• RoHS Compliant
• Typ. RDS(on) = 296 m
• Internal Gate Resistance: 0.9

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