Infineon OptiMOS™ 5 Silicon N-Channel MOSFET, 50 A, 40 V, 8-Pin SuperSO8 5 x 6 IPC50N04S55R8ATMA1

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RS Stock No.:
229-1830
Mfr. Part No.:
IPC50N04S55R8ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

40 V

Package Type

SuperSO8 5 x 6

Series

OptiMOS™ 5

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0058 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.4V

Transistor Material

Silicon

Number of Elements per Chip

1

40V, N-Ch, 0.9 mΩ max, Automotive MOSFET, PQNF, OptiMOS™-6


Infineon introduces its latest OptiMOS™6 40V power MOS technology in the 5x6mm² SS08 leadless package with highest quality level and robustness for automotive applications. A portfolio of 16 products (RDSon_max from 0.8mΩ to 4.4mΩ address the whole applications range from low-power e.g. Body applications to high-power e.g. EPS) which enables the the customer to find the best product fit in the their applications.
All of this enables the Best-in-Class product FOM (RDSon x Qg) and performance on the market. The new SS08 product offers 120A continuous current ratings, which is >25% higher than the standard DPAK at almost half of its footprint area.
Additionally, the new generation of the SS08 package enables superior switching performance and EMI behavior due to very low package inductance (≈4x lower package inductivity vs traditional packages e.g. DPAK, D²PAK) by using the new copper-clip intercontact technology.

Summary of Features


•OptiMOS™ - power MOSFET for automotive applications
•N-channel - Enhancement mode - Normal Level
•AEC Q101 qualified
•MSL1 up to 260°C peak reflow
•175°C operating temperature
•Green Product (RoHS compliant)
•100% Avalanche tested

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