Infineon CoolMOS™ P7 N-Channel MOSFET, 3 A, 700 V, 3-Pin SOT-223 IPN70R2K0P7SATMA1
- RS Stock No.:
- 222-4921
- Mfr. Part No.:
- IPN70R2K0P7SATMA1
- Brand:
- Infineon
Save 4% when you buy 6000 units
Subtotal (1 reel of 3000 units)*
£432.00
(exc. VAT)
£519.00
(inc. VAT)
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Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | £0.144 | £432.00 |
| 6000 + | £0.137 | £411.00 |
*price indicative
- RS Stock No.:
- 222-4921
- Mfr. Part No.:
- IPN70R2K0P7SATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 3 A | |
| Maximum Drain Source Voltage | 700 V | |
| Package Type | SOT-223 | |
| Series | CoolMOS™ P7 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 2000 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 3 A | ||
Maximum Drain Source Voltage 700 V | ||
Package Type SOT-223 | ||
Series CoolMOS™ P7 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2000 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
The Infineon CoolMOS™ P7 superjunction (SJ) MOSFET is designed to address typical challenges in the low power SMPS market, by offering excellent performance and ease-of-use, enabling improved form factors and price competitiveness. The SOT-223 package is a cost effective one-to-one drop-in alternative to DPAK that also enables footprint reduction in some designs. It can be placed on a typical DPAK footprint and shows comparable thermal performance. This combination makes CoolMOS™ P7 in SOT-223 a perfect fit for its target applications.
Enabling lower MOSFET chip temperature
Leading to higher efficency compared to previous technologies
Allowing improved form factors and slim designs
Leading to higher efficency compared to previous technologies
Allowing improved form factors and slim designs
Related links
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