Silicon N-Channel MOSFET, 9 A, 650 V, 3-Pin TO-220 FP Infineon IPA60R180C7XKSA1
- RS Stock No.:
- 222-4642
- Mfr. Part No.:
- IPA60R180C7XKSA1
- Brand:
- Infineon
495 In stock - FREE next working day delivery available
Price Each (In a Pack of 5)
£2.23
(exc. VAT)
£2.68
(inc. VAT)
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | £2.23 | £11.15 |
| 25 - 45 | £2.008 | £10.04 |
| 50 - 120 | £1.874 | £9.37 |
| 125 - 245 | £1.74 | £8.70 |
| 250 + | £1.628 | £8.14 |
*price indicative
- RS Stock No.:
- 222-4642
- Mfr. Part No.:
- IPA60R180C7XKSA1
- Brand:
- Infineon
Technical Reference
Legislation and Compliance
Product Details
The Infineon design of Cool MOS™ C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².
Capable of reverse conduction
Low gate charge, low output charge
Superior commutation ruggedness
Qualified for standard grade applications according to JEDEC standards
Low gate charge, low output charge
Superior commutation ruggedness
Qualified for standard grade applications according to JEDEC standards
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 9 A |
| Maximum Drain Source Voltage | 650 V |
| Series | CoolMOS™ |
| Package Type | TO-220 FP |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 0.18 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Transistor Material | Silicon |
| Number of Elements per Chip | 1 |
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