Infineon CoolMOS™ Silicon N-Channel MOSFET, 9 A, 650 V, 3-Pin TO-220 FP IPA60R180C7XKSA1
- RS Stock No.:
- 222-4642
- Mfr. Part No.:
- IPA60R180C7XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
£12.35
(exc. VAT)
£14.80
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 455 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | £2.47 | £12.35 |
| 25 - 45 | £2.224 | £11.12 |
| 50 - 120 | £2.074 | £10.37 |
| 125 - 245 | £1.926 | £9.63 |
| 250 + | £1.804 | £9.02 |
*price indicative
- RS Stock No.:
- 222-4642
- Mfr. Part No.:
- IPA60R180C7XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 9 A | |
| Maximum Drain Source Voltage | 650 V | |
| Series | CoolMOS™ | |
| Package Type | TO-220 FP | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.18 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Silicon | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 9 A | ||
Maximum Drain Source Voltage 650 V | ||
Series CoolMOS™ | ||
Package Type TO-220 FP | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.18 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Number of Elements per Chip 1 | ||
Transistor Material Silicon | ||
The Infineon design of Cool MOS™ C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².
Capable of reverse conduction
Low gate charge, low output charge
Superior commutation ruggedness
Qualified for standard grade applications according to JEDEC standards
Low gate charge, low output charge
Superior commutation ruggedness
Qualified for standard grade applications according to JEDEC standards
Related links
- Infineon CoolMOS™ Silicon N-Channel MOSFET 650 V, 3-Pin TO-220 FP IPA60R180C7XKSA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 650 V, 3-Pin TO-220 FP IPAW60R360P7SXKSA1
- Infineon CoolMOS™ Silicon N-Channel MOSFET 650 V, 3-Pin DPAK IPD60R280CFD7ATMA1
- Diodes Inc N-Channel MOSFET 650 V, 3-Pin ITO-220 DMG9N65CTI
- ROHM N-Channel MOSFET 650 V, 3-Pin DPAK R6509END3TL1
- ROHM N-Channel MOSFET 650 V, 3-Pin DPAK R6509KND3TL1
- Vishay Dual Silicon N-Channel MOSFET 650 V, 8-Pin PowerPAK SO-8DC SIHA150N60E-GE3
- Infineon CoolMOS™ Silicon N-Channel MOSFET 650 V, 3-Pin TO-220 FP IPA60R099P6XKSA1