Infineon CoolMOS Type N-Channel MOSFET, 9 A, 650 V Enhancement, 3-Pin TO-220 IPA60R180C7XKSA1

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 5 units)*

£11.57

(exc. VAT)

£13.885

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 455 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
5 - 20£2.314£11.57
25 - 45£2.082£10.41
50 - 120£1.944£9.72
125 - 245£1.804£9.02
250 +£1.69£8.45

*price indicative

Packaging Options:
RS Stock No.:
222-4642
Mfr. Part No.:
IPA60R180C7XKSA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

9A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-220

Series

CoolMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

180mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon design of Cool MOS™ C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².

Capable of reverse conduction

Low gate charge, low output charge

Superior commutation ruggedness

Qualified for standard grade applications according to JEDEC standards

Related links