Infineon CoolMOS™ Silicon N-Channel MOSFET, 9 A, 650 V, 3-Pin TO-220 FP IPA60R180C7XKSA1

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Subtotal (1 pack of 5 units)*

£12.35

(exc. VAT)

£14.80

(inc. VAT)

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  • 455 unit(s) ready to ship
  • Plus 999,999,540 unit(s) shipping from 05 February 2026
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Per unit
Per Pack*
5 - 20£2.47£12.35
25 - 45£2.224£11.12
50 - 120£2.074£10.37
125 - 245£1.926£9.63
250 +£1.804£9.02

*price indicative

Packaging Options:
RS Stock No.:
222-4642
Mfr. Part No.:
IPA60R180C7XKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220 FP

Series

CoolMOS™

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.18 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Silicon

The Infineon design of Cool MOS™ C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².

Capable of reverse conduction
Low gate charge, low output charge
Superior commutation ruggedness
Qualified for standard grade applications according to JEDEC standards

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