Infineon CoolMOS Type N-Channel MOSFET, 37.9 A, 650 V Enhancement, 3-Pin TO-220 IPA60R099P6XKSA1
- RS Stock No.:
- 222-4640
- Mfr. Part No.:
- IPA60R099P6XKSA1
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
£4.78
(exc. VAT)
£5.74
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- Plus 862 unit(s) shipping from 01 June 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £2.39 | £4.78 |
| 20 - 48 | £2.15 | £4.30 |
| 50 - 98 | £2.01 | £4.02 |
| 100 - 198 | £1.865 | £3.73 |
| 200 + | £1.745 | £3.49 |
*price indicative
- RS Stock No.:
- 222-4640
- Mfr. Part No.:
- IPA60R099P6XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 37.9A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS | |
| Package Type | TO-220 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 99mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 37.9A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS | ||
Package Type TO-220 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 99mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. Cool MOS™ P6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.
Increased MOSFET dv/dt ruggedness
Extremely low losses due to very low FOM Rdson*Qg and Eoss
Very high commutation ruggedness
Pb-free plating Halogen free mold compound
Related links
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS P6 Type N-Channel MOSFET 650 V Enhancement, 4-Pin TO-220
- Infineon CoolMOS P6 Type N-Channel MOSFET 650 V Enhancement, 4-Pin TO-220 IPP60R099P6XKSA1
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220