Infineon CoolMOS Type N-Channel MOSFET, 37.9 A, 650 V Enhancement, 3-Pin TO-220 IPA60R099P6XKSA1

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Subtotal (1 pack of 2 units)*

£7.50

(exc. VAT)

£9.00

(inc. VAT)

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Per Pack*
2 - 18£3.75£7.50
20 - 48£3.37£6.74
50 - 98£3.15£6.30
100 - 198£2.93£5.86
200 +£2.74£5.48

*price indicative

Packaging Options:
RS Stock No.:
222-4640
Mfr. Part No.:
IPA60R099P6XKSA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

37.9A

Maximum Drain Source Voltage Vds

650V

Series

CoolMOS

Package Type

TO-220

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

99mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. Cool MOS™ P6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.

Increased MOSFET dv/dt ruggedness

Extremely low losses due to very low FOM Rdson*Qg and Eoss

Very high commutation ruggedness

Pb-free plating Halogen free mold compound

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