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Infineon CoolMOS Type N-Channel MOSFET, 37.9 A, 650 V Enhancement, 3-Pin TO-220 IPA60R099P6XKSA1

RS Stock No.:: 222-4640
Mfr. Part No.:: IPA60R099P6XKSA1
Brand:: Infineon

Infineon CoolMOS Type N-Channel MOSFET, 37.9 A, 650 V Enhancement, 3-Pin TO-220 IPA60R099P6XKSA1

Bulk discount available

Subtotal (1 pack of 2 units)*

£4.78

(exc. VAT)

£5.74

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

Plus 872 unit(s) shipping from 09 February 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
2 - 18	£2.39	£4.78
20 - 48	£2.15	£4.30
50 - 98	£2.01	£4.02
100 - 198	£1.865	£3.73
200 +	£1.745	£3.49

*price indicative

RS Stock No.:: 222-4640
Mfr. Part No.:: IPA60R099P6XKSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	37.9A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-220
	Series	CoolMOS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	99mΩ
	Channel Mode	Enhancement
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 37.9A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-220
	Series CoolMOS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 99mΩ
	Channel Mode Enhancement
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPA60R099P6XKSA1

The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. Cool MOS™ P6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.

Increased MOSFET dv/dt ruggedness

Extremely low losses due to very low FOM Rdson*Qg and Eoss

Very high commutation ruggedness

Pb-free plating Halogen free mold compound