onsemi NTMFS4D2N Type N-Channel MOSFET, 113 A, 100 V Enhancement, 5-Pin DFN NTMFS4D2N10MDT1G
- RS Stock No.:
- 221-6732
- Mfr. Part No.:
- NTMFS4D2N10MDT1G
- Brand:
- onsemi
Stock information currently inaccessible
- RS Stock No.:
- 221-6732
- Mfr. Part No.:
- NTMFS4D2N10MDT1G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 113A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | NTMFS4D2N | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 4.3mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.85V | |
| Typical Gate Charge Qg @ Vgs | 60nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 132W | |
| Maximum Operating Temperature | 175°C | |
| Height | 6.3mm | |
| Length | 5.3mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 113A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series NTMFS4D2N | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 4.3mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.85V | ||
Typical Gate Charge Qg @ Vgs 60nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 132W | ||
Maximum Operating Temperature 175°C | ||
Height 6.3mm | ||
Length 5.3mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ON Semiconductor N-Channel MV MOSFET is produced using an advanced power trench process that incorporates shielded gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with very low Qg and Qoss.
Low RDS(on) to minimize conduction losses
Low QG and capacitance to minimize driver losses
Low QRR, soft recovery body diode
Related links
- onsemi NTMFS4D2N Type N-Channel MOSFET 100 V Enhancement, 5-Pin DFN
- onsemi NVMFS6H824N Type N-Channel MOSFET 80 V Enhancement, 5-Pin DFN
- onsemi Type N-Channel MOSFET 40 V Enhancement, 5-Pin DFN
- onsemi NVMFS5C404NL Type N-Channel MOSFET 40 V Enhancement, 5-Pin DFN
- onsemi NVMFS6D1N08H Type N-Channel MOSFET 80 V Enhancement, 5-Pin DFN
- onsemi NVMFS6H818N Type N-Channel MOSFET 80 V Enhancement, 5-Pin DFN
- onsemi NVMFS6H800N Type N-Channel MOSFET 80 V Enhancement, 5-Pin DFN
- onsemi NVMFS6H801N Type N-Channel MOSFET 80 V Enhancement, 5-Pin DFN