onsemi NTMFS4D2N Type N-Channel MOSFET, 113 A, 100 V Enhancement, 5-Pin DFN
- RS Stock No.:
- 221-6731
- Mfr. Part No.:
- NTMFS4D2N10MDT1G
- Brand:
- onsemi
Subtotal (1 reel of 1500 units)*
£1,203.00
(exc. VAT)
£1,443.00
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Reel* |
|---|---|---|
| 1500 + | £0.802 | £1,203.00 |
*price indicative
- RS Stock No.:
- 221-6731
- Mfr. Part No.:
- NTMFS4D2N10MDT1G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 113A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | DFN | |
| Series | NTMFS4D2N | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 4.3mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.85V | |
| Typical Gate Charge Qg @ Vgs | 60nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 132W | |
| Maximum Operating Temperature | 175°C | |
| Length | 5.3mm | |
| Height | 6.3mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 113A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type DFN | ||
Series NTMFS4D2N | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 4.3mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.85V | ||
Typical Gate Charge Qg @ Vgs 60nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 132W | ||
Maximum Operating Temperature 175°C | ||
Length 5.3mm | ||
Height 6.3mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ON Semiconductor N-Channel MV MOSFET is produced using an advanced power trench process that incorporates shielded gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with very low Qg and Qoss.
Low RDS(on) to minimize conduction losses
Low QG and capacitance to minimize driver losses
Low QRR, soft recovery body diode
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