onsemi NTMFS4D2N N-Channel MOSFET, 113 A, 100 V, 5-Pin DFN NTMFS4D2N10MDT1G
- RS Stock No.:
- 221-6731
- Mfr. Part No.:
- NTMFS4D2N10MDT1G
- Brand:
- onsemi
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 221-6731
- Mfr. Part No.:
- NTMFS4D2N10MDT1G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 113 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | NTMFS4D2N | |
| Package Type | DFN | |
| Mounting Type | Surface Mount | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance | 0.0043 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 113 A | ||
Maximum Drain Source Voltage 100 V | ||
Series NTMFS4D2N | ||
Package Type DFN | ||
Mounting Type Surface Mount | ||
Pin Count 5 | ||
Maximum Drain Source Resistance 0.0043 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
The ON Semiconductor N-Channel MV MOSFET is produced using an advanced power trench process that incorporates shielded gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with very low Qg and Qoss.
Low RDS(on) to minimize conduction losses
Low QG and capacitance to minimize driver losses
Low QRR, soft recovery body diode
Low QG and capacitance to minimize driver losses
Low QRR, soft recovery body diode
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