onsemi NTMFS4D2N Type N-Channel MOSFET, 113 A, 100 V Enhancement, 5-Pin DFN
- RS Stock No.:
- 221-6731
- Mfr. Part No.:
- NTMFS4D2N10MDT1G
- Brand:
- onsemi
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 221-6731
- Mfr. Part No.:
- NTMFS4D2N10MDT1G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 113A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | NTMFS4D2N | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 4.3mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 60nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 132W | |
| Forward Voltage Vf | 0.85V | |
| Maximum Operating Temperature | 175°C | |
| Height | 6.3mm | |
| Length | 5.3mm | |
| Width | 1.1 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 113A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series NTMFS4D2N | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 4.3mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 60nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 132W | ||
Forward Voltage Vf 0.85V | ||
Maximum Operating Temperature 175°C | ||
Height 6.3mm | ||
Length 5.3mm | ||
Width 1.1 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ON Semiconductor N-Channel MV MOSFET is produced using an advanced power trench process that incorporates shielded gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with very low Qg and Qoss.
Low RDS(on) to minimize conduction losses
Low QG and capacitance to minimize driver losses
Low QRR, soft recovery body diode
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