onsemi NTMFS0D6N Type N-Channel MOSFET, 433 A, 30 V Enhancement, 5-Pin DFN NTMFS0D6N03CT1G
- RS Stock No.:
- 221-6726
- Mfr. Part No.:
- NTMFS0D6N03CT1G
- Brand:
- onsemi
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View bulk pricing optionsSubtotal (1 pack of 5 units)*
£9.32
(exc. VAT)
£11.185
(inc. VAT)
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In Stock
- Plus 3,060 unit(s) shipping from 01 June 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £1.864 | £9.32 |
| 50 - 95 | £1.606 | £8.03 |
| 100 + | £1.394 | £6.97 |
*price indicative
- RS Stock No.:
- 221-6726
- Mfr. Part No.:
- NTMFS0D6N03CT1G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 433A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | DFN | |
| Series | NTMFS0D6N | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 0.62mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 145nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 200W | |
| Maximum Operating Temperature | 175°C | |
| Length | 5.3mm | |
| Height | 6.3mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 433A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type DFN | ||
Series NTMFS0D6N | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 0.62mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 145nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 200W | ||
Maximum Operating Temperature 175°C | ||
Length 5.3mm | ||
Height 6.3mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ON Semiconductor 30V of power MOSFET used 433 A of drain current with single N−channel. It improve inrush current management and also improve system efficiency.
Advanced package (5x6mm)
Ultra low RDS(on) to improve system efficiency
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