MPN

Infineon OptiMOS™ Type N-Channel MOSFET, 433 A, 30 V, 8-Pin TDSON BSC005N03LS5IATMA1

RS Stock No.:: 236-3645
Mfr. Part No.:: BSC005N03LS5IATMA1
Brand:: Infineon

Infineon OptiMOS™ Type N-Channel MOSFET, 433 A, 30 V, 8-Pin TDSON BSC005N03LS5IATMA1

Bulk discount available

Subtotal (1 pack of 5 units)*

£10.15

(exc. VAT)

£12.20

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

Plus 4,965 unit(s) shipping from 29 December 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
5 - 45	£2.03	£10.15
50 - 120	£1.828	£9.14
125 - 245	£1.726	£8.63
250 - 495	£1.604	£8.02
500 +	£1.482	£7.41

*price indicative

RS Stock No.:: 236-3645
Mfr. Part No.:: BSC005N03LS5IATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	433A
	Maximum Drain Source Voltage Vds	30V
	Series	OptiMOS™
	Package Type	TDSON
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	5.5mΩ
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	188W
	Typical Gate Charge Qg @ Vgs	51nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.7V
	Maximum Operating Temperature	175°C
	Width	6.35 mm
	Height	1.1mm
	Standards/Approvals	No
	Length	5.49mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 433A
	Maximum Drain Source Voltage Vds 30V
	Series OptiMOS™
	Package Type TDSON
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 5.5mΩ
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 188W
	Typical Gate Charge Qg @ Vgs 51nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.7V
	Maximum Operating Temperature 175°C
	Width 6.35 mm
	Height 1.1mm
	Standards/Approvals No
	Length 5.49mm
	Automotive Standard No

Datasheet - BSC005N03LS5IATMA1

The Infineon OptiMOS power MOSFET offers Benchmark solutions by enabling highest power density and energy efficiency, both in stand by and full operation. It offers drain source on-state resistance of 0.55 m Ohm.

Highest efficiency

Highest power density in SuperSO8 package

Reduction of overall system costs

RoHS compliant

Halogen free