Infineon CoolMOS 7 Type N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-220 IPP60R210CFD7XKSA1
- RS Stock No.:
- 217-2561
- Mfr. Part No.:
- IPP60R210CFD7XKSA1
- Brand:
- Infineon
Subtotal (1 pack of 5 units)*
£3.37
(exc. VAT)
£4.045
(inc. VAT)
FREE delivery for orders over £60.00
Temporarily out of stock
- 355 unit(s) ready to ship
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 + | £0.674 | £3.37 |
*price indicative
- RS Stock No.:
- 217-2561
- Mfr. Part No.:
- IPP60R210CFD7XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | CoolMOS 7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 210mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 64W | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 29.95mm | |
| Length | 10.36mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series CoolMOS 7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 210mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 64W | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 29.95mm | ||
Length 10.36mm | ||
Automotive Standard No | ||
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies.
Ultra-fast body diode
Low gate charge
Best-in-class reverse recovery charge(Qrr)
Improved MOSFET reverse diode dv/dt and diF/dtruggedness
Lowest FOMRDS(on)*Qg and RDS(on)*Eoss
Best-in-class RDS(on)in SMD and THD packages
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