MPN

Infineon CoolMOS 7 Type N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-220

RS Stock No.:: 217-2560
Mfr. Part No.:: IPP60R210CFD7XKSA1
Brand:: Infineon

Infineon CoolMOS 7 Type N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-220

Bulk discount available

Subtotal (1 tube of 50 units)*

£50.80

(exc. VAT)

£60.95

(inc. VAT)

FREE delivery for orders over £50.00

Last RS stock

Final 350 unit(s), ready to ship

Units	Per unit	Per Tube*
50 - 50	£1.016	£50.80
100 - 200	£0.914	£45.70
250 +	£0.864	£43.20

*price indicative

RS Stock No.:: 217-2560
Mfr. Part No.:: IPP60R210CFD7XKSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	12A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-220
	Series	CoolMOS 7
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	210mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	23nC
	Maximum Power Dissipation Pd	64W
	Forward Voltage Vf	0.9V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Width	4.57 mm
	Height	29.95mm
	Length	10.36mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 12A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-220
	Series CoolMOS 7
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 210mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 23nC
	Maximum Power Dissipation Pd 64W
	Forward Voltage Vf 0.9V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Width 4.57 mm
	Height 29.95mm
	Length 10.36mm
	Automotive Standard No

Datasheet - IPP60R210CFD7XKSA1

The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies.

Ultra-fast body diode

Low gate charge

Best-in-class reverse recovery charge(Qrr)

Improved MOSFET reverse diode dv/dt and diF/dtruggedness

Lowest FOMRDS(on)*Qg and RDS(on)*Eoss

Best-in-class RDS(on)in SMD and THD packages