Infineon CoolMOS™ 7 N-Channel MOSFET, 12 A, 600 V, 3-Pin TO-220 IPP60R210CFD7XKSA1
- RS Stock No.:
- 217-2561
- Mfr. Part No.:
- IPP60R210CFD7XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
£8.56
(exc. VAT)
£10.27
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 355 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
---|---|---|
5 - 20 | £1.712 | £8.56 |
25 - 45 | £1.54 | £7.70 |
50 - 120 | £1.44 | £7.20 |
125 - 245 | £1.336 | £6.68 |
250 + | £1.25 | £6.25 |
*price indicative
- RS Stock No.:
- 217-2561
- Mfr. Part No.:
- IPP60R210CFD7XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 12 A | |
Maximum Drain Source Voltage | 600 V | |
Package Type | TO-220 | |
Series | CoolMOS™ 7 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 210 mO | |
Maximum Gate Threshold Voltage | 4.5V | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 12 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-220 | ||
Series CoolMOS™ 7 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 210 mO | ||
Maximum Gate Threshold Voltage 4.5V | ||
Number of Elements per Chip 1 | ||
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies.
Ultra-fast body diode
Low gate charge
Best-in-class reverse recovery charge(Qrr)
Improved MOSFET reverse diode dv/dt and diF/dtruggedness
Lowest FOMRDS(on)*Qg and RDS(on)*Eoss
Best-in-class RDS(on)in SMD and THD packages
Low gate charge
Best-in-class reverse recovery charge(Qrr)
Improved MOSFET reverse diode dv/dt and diF/dtruggedness
Lowest FOMRDS(on)*Qg and RDS(on)*Eoss
Best-in-class RDS(on)in SMD and THD packages
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