Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 35 A, 60 V Enhancement, 8-Pin PDFN56 TSM220NB06LCR

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Subtotal (1 pack of 25 units)*

£23.275

(exc. VAT)

£27.925

(inc. VAT)

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Being discontinued
  • Final 1,625 unit(s), ready to ship
Units
Per unit
Per Pack*
25 - 25£0.931£23.28
50 - 75£0.913£22.83
100 - 225£0.838£20.95
250 - 975£0.823£20.58
1000 +£0.764£19.10

*price indicative

Packaging Options:
RS Stock No.:
216-9704
Mfr. Part No.:
TSM220NB06LCR
Brand:
Taiwan Semiconductor
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Brand

Taiwan Semiconductor

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

60V

Series

TSM025

Package Type

PDFN56

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

22mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

68W

Typical Gate Charge Qg @ Vgs

23nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Standards/Approvals

IEC 61249-2-21, RoHS, WEEE

Width

4.2 mm

Height

1.1mm

Length

6.2mm

Automotive Standard

No

The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested

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