Infineon CoolMOS™ P7 N-Channel MOSFET, 6 A, 600 V, 3-Pin TO-220 IPP60R600P7XKSA1
- RS Stock No.:
- 215-2546
- Mfr. Part No.:
- IPP60R600P7XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
£10.80
(exc. VAT)
£13.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 999,999,990 unit(s) shipping from 13 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | £1.08 | £10.80 |
| 50 - 90 | £1.026 | £10.26 |
| 100 - 240 | £0.983 | £9.83 |
| 250 - 490 | £0.94 | £9.40 |
| 500 + | £0.875 | £8.75 |
*price indicative
- RS Stock No.:
- 215-2546
- Mfr. Part No.:
- IPP60R600P7XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 6 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO-220 | |
| Series | CoolMOS™ P7 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.6 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 6 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-220 | ||
Series CoolMOS™ P7 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.6 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
The Infineon 600V Cool MOS™ P7 is the successor to the 600V Cool MOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the Cool MOS™ 7th generation platform ensure its high efficiency. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g. very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses make switching application seven more efficient, more compact and much cooler.
Suitable for hard and soft switching (PFC and LLC) due to an outstanding commutation ruggedness
Excellent ESD robustness >2kV(HBM) for all products
Significant reduction of switching and conduction losses
Wide portfolio in through hole and surface mount packages
Excellent ESD robustness >2kV(HBM) for all products
Significant reduction of switching and conduction losses
Wide portfolio in through hole and surface mount packages
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