Infineon CoolMOS™ P7 N-Channel MOSFET, 6 A, 800 V, 3-Pin TO-220 IPP80R900P7XKSA1
- RS Stock No.:
- 217-2571
- Mfr. Part No.:
- IPP80R900P7XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 50 units)*
£56.55
(exc. VAT)
£67.85
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 400 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £1.131 | £56.55 |
| 100 - 200 | £0.916 | £45.80 |
| 250 - 450 | £0.86 | £43.00 |
| 500 - 950 | £0.814 | £40.70 |
| 1000 + | £0.78 | £39.00 |
*price indicative
- RS Stock No.:
- 217-2571
- Mfr. Part No.:
- IPP80R900P7XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 6 A | |
| Maximum Drain Source Voltage | 800 V | |
| Series | CoolMOS™ P7 | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 900 mO | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 6 A | ||
Maximum Drain Source Voltage 800 V | ||
Series CoolMOS™ P7 | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 900 mO | ||
Maximum Gate Threshold Voltage 3.5V | ||
Number of Elements per Chip 1 | ||
The Infineon 800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.
Best-in-class FOM R DS(on) * E oss
reduced Qg, C iss and C oss
Best-in-class DPAK R DS(on) of 280mΩ
Best-in-class V (GS)th of 3V and smallest V (GS)th variation of ± 0.5V
Integrated Zener diode ESD protection up to Class 2 (HBM)
Best-in-class quality and reliability
Fully optimized portfolio
Best-in-class DPAK R DS(on) of 280mΩ
Best-in-class V (GS)th of 3V and smallest V (GS)th variation of ± 0.5V
Integrated Zener diode ESD protection up to Class 2 (HBM)
Best-in-class quality and reliability
Fully optimized portfolio
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