Infineon CoolMOS™ P7 N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220 IPP60R099P7XKSA1

RS Stock No.:: 215-2539
Mfr. Part No.:: IPP60R099P7XKSA1
Brand:: Infineon

Infineon CoolMOS™ P7 N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220 IPP60R099P7XKSA1

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£16.95

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Units	Per unit	Per Pack*
5 - 20	£3.39	£16.95
25 - 45	£2.848	£14.24
50 - 120	£2.678	£13.39
125 - 245	£2.474	£12.37
250 +	£2.306	£11.53

*price indicative

RS Stock No.:: 215-2539
Mfr. Part No.:: IPP60R099P7XKSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	31 A
	Maximum Drain Source Voltage	600 V
	Package Type	TO-220
	Series	CoolMOS™ P7
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	0.099 Ω
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	3V
	Maximum Power Dissipation	117 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	± 20 V
	Number of Elements per Chip	1
	Width	15.95mm
	Length	10.36mm
	Transistor Material	Si
	Maximum Operating Temperature	+150 °C
	Minimum Operating Temperature	-55 °C
	Height	4.57mm
	Forward Diode Voltage	0.9V

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 31 A
	Maximum Drain Source Voltage 600 V
	Package Type TO-220
	Series CoolMOS™ P7
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 0.099 Ω
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 3V
	Maximum Power Dissipation 117 W
	Transistor Configuration Single
	Maximum Gate Source Voltage ± 20 V
	Number of Elements per Chip 1
	Width 15.95mm
	Length 10.36mm
	Transistor Material Si
	Maximum Operating Temperature +150 °C
	Minimum Operating Temperature -55 °C
	Height 4.57mm
	Forward Diode Voltage 0.9V

Infineon CoolMOS™ P7 Series MOSFET, 31A Continuous Drain Current, 600V Drain Source Voltage - IPP60R099P7XKSA1

This MOSFET is a high-performance power component designed specifically for high-voltage applications. With a maximum continuous drain current of 31A and a maximum drain-source voltage of 600V, it is housed in a TO-220 package, making it suitable for through-hole mounting. Its exceptional specifications make it ideal for advanced electronic designs across various industries.

Features & Benefits

• Suitable for both hard and soft switching use
• Significantly reduces switching and conduction losses
• Excellent robust body diode for hard commutation
• High ESD protection exceeding 2kV for reliable performance
• Enhancement mode configuration simplifies circuit design

Applications

• Ideal for PFC (Power Factor Correction) stages
• Used in hard-switching PWM (Pulse Width Modulation)
• Applicable in resonant switching stages for various electronics
• Suitable for adapters and LCD/PDP TVs
• Utilised in lighting solutions, server equipment, and telecom systems

What is the significance of the low RDS(on) value in this device?

A low RDS(on) value of 0.099 ohm minimises conduction losses, enhancing the efficiency of power conversion in applications where heat generation is a concern.

How does its working temperature range impact its performance?

Operating effectively between -55°C and +150°C, it ensures reliability and stability even in extreme conditions, making it suitable for diverse environments.

Can it be used in parallel configurations?

Yes, for parallel configurations, the use of ferrite beads on the gate or separate totem poles is generally recommended to prevent oscillation and ensure stable operation.