Infineon 800V CoolMOS P7 N-Channel MOSFET, 17 A, 800 V Enhancement, 3-Pin TO-220 IPP80R280P7XKSA1
- RS Stock No.:
- 214-4419
- Mfr. Part No.:
- IPP80R280P7XKSA1
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (50 units, in tubes of 50)*
£79.30
(exc. VAT)
£95.15
(inc. VAT)
FREE delivery for orders over £60.00
Last RS stock
- Final 400 unit(s), ready to ship
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £1.586 | £79.30 |
| 100 - 200 | £1.507 | £75.35 |
| 250 + | £1.475 | £73.75 |
*price indicative
- RS Stock No.:
- 214-4419
- Mfr. Part No.:
- IPP80R280P7XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-220 | |
| Series | 800V CoolMOS P7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 280mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 900mV | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Power Dissipation Pd | 101W | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.2mm | |
| Width | 15.93mm | |
| Height | 4.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-220 | ||
Series 800V CoolMOS P7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 280mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 900mV | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Power Dissipation Pd 101W | ||
Maximum Operating Temperature 150°C | ||
Length 10.2mm | ||
Width 15.93mm | ||
Height 4.4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Infineon 800V Cool MOS P7 super junction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on fly back applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power.
It has fully optimised portfolio
It has lower assembly cost
Related links
- Infineon 800V CoolMOS P7 N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 IPP80R280P7XKSA1
- Infineon 800V CoolMOS P7 N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 IPAN80R450P7XKSA1
- Infineon 800V CoolMOS P7 N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 IPA80R900P7XKSA1
- Infineon 800V CoolMOS P7 N-Channel MOSFET 800 V Enhancement, 3-Pin SOT-223
- Infineon 800V CoolMOS P7 N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252 IPD80R2K0P7ATMA1
- Infineon 800V CoolMOS P7 N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252 IPD80R900P7ATMA1
- Infineon 800V CoolMOS P7 N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252 IPD80R2K4P7ATMA1
- Infineon 800V CoolMOS P7 N-Channel MOSFET 800 V Enhancement, 3-Pin SOT-223 IPN80R1K4P7ATMA1


