Infineon OptiMOS 5 Type N-Channel MOSFET, 40 A, 80 V N, 8-Pin PQFN
- RS Stock No.:
- 214-4341P
- Mfr. Part No.:
- BSZ070N08LS5ATMA1
- Brand:
- Infineon
Subtotal 15 units (supplied on a continuous strip)*
£10.17
(exc. VAT)
£12.21
(inc. VAT)
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In Stock
- Plus 27,075 unit(s) shipping from 22 June 2026
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Units | Per unit |
|---|---|
| 15 + | £0.678 |
*price indicative
- RS Stock No.:
- 214-4341P
- Mfr. Part No.:
- BSZ070N08LS5ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | OptiMOS 5 | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 9.4mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 14.1nC | |
| Maximum Power Dissipation Pd | 69W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Length | 3.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series OptiMOS 5 | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 9.4mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 14.1nC | ||
Maximum Power Dissipation Pd 69W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Length 3.4mm | ||
Automotive Standard No | ||
OptiMOS™ 5 power MOSFETs logic level provide low RDS(on) in a small package
Infineon's OptiMOS™ 5 power MOSFETs logic level are highly suitable for wireless charging, adapter and telecom applications. The devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers.
