The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converter.
Fast-recovery body diode Lower RDS(on) per area vs previous generation Low gate charge, input capacitance and resistance 100% avalanche tested Extremely high dv/dt ruggedness
Attribute
Value
Channel Type
N
Maximum Continuous Drain Current
48 A
Maximum Drain Source Voltage
650 V
Series
STWA68N65DM6
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.059 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Transistor Material
Si
Number of Elements per Chip
1
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