Vishay SiSS32ADN Type N-Channel MOSFET, 63 A, 80 V Enhancement, 8-Pin PowerPAK 1212 SiSS32ADN-T1-GE3

Subtotal (1 pack of 10 units)*

£5.76

(exc. VAT)

£6.91

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 11,840 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
10 +£0.576£5.76

*price indicative

Packaging Options:
RS Stock No.:
210-5014
Mfr. Part No.:
SiSS32ADN-T1-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

63A

Maximum Drain Source Voltage Vds

80V

Package Type

PowerPAK 1212

Series

SiSS32ADN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

6.1mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

24nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Maximum Power Dissipation Pd

65.7W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

3.4mm

Height

0.83mm

Width

3.4 mm

Automotive Standard

No

The Vishay N-Channel 80 V (D-S) MOSFET has PowerPAK 1212-8S package type with 63 A drain current.

TrenchFET Gen IV power MOSFET

Very low RDS - Qg figure-of-merit (FOM)

Tuned for the lowest RDS - Qoss FOM

100 % Rg and UIS tested

Related links