STMicroelectronics STO67N60DM6 Type N-Channel MOSFET, 33 A, 600 V Enhancement, 3-Pin TO-220

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Subtotal (1 reel of 1800 units)*

£6,514.20

(exc. VAT)

£7,817.40

(inc. VAT)

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Units
Per unit
Per Reel*
1800 +£3.619£6,514.20

*price indicative

RS Stock No.:
206-6067
Mfr. Part No.:
STO67N60DM6
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

33A

Maximum Drain Source Voltage Vds

600V

Series

STO67N60DM6

Package Type

TO-220

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

59mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.6V

Typical Gate Charge Qg @ Vgs

72.5nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

25 V

Maximum Power Dissipation Pd

150W

Maximum Operating Temperature

150°C

Width

9.8 mm

Length

11.48mm

Height

2.2mm

Standards/Approvals

No

Automotive Standard

No

The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Fast-recovery body diode

Lower RDS(on) per area vs previous generation

Low gate charge, input capacitance and resistance

100% avalanche tested

Extremely high dv/dt ruggedness

Zener-protected

Excellent switching performance thanks to the extra driving source pin

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