Diodes Inc DMT47 N-Channel MOSFET, 11.9 A, 30.2 A, 40 V, 8-Pin PowerDI3333-8 DMT47M2LDV-7
- RS Stock No.:
- 206-0143
- Mfr. Part No.:
- DMT47M2LDV-7
- Brand:
- DiodesZetex
Bulk discount available
Subtotal (1 pack of 25 units)*
£16.725
(exc. VAT)
£20.075
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 999,999,975 unit(s) shipping from 18 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
---|---|---|
25 - 25 | £0.669 | £16.73 |
50 - 75 | £0.656 | £16.40 |
100 - 225 | £0.572 | £14.30 |
250 - 975 | £0.556 | £13.90 |
1000 + | £0.543 | £13.58 |
*price indicative
- RS Stock No.:
- 206-0143
- Mfr. Part No.:
- DMT47M2LDV-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | DiodesZetex | |
Channel Type | N | |
Maximum Continuous Drain Current | 11.9 A, 30.2 A | |
Maximum Drain Source Voltage | 40 V | |
Series | DMT47 | |
Package Type | PowerDI3333-8 | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 0.015 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.3V | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 11.9 A, 30.2 A | ||
Maximum Drain Source Voltage 40 V | ||
Series DMT47 | ||
Package Type PowerDI3333-8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 0.015 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.3V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- CN
The DiodesZetex 40V,8 pin dual N- channel enhancement mode MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power management application. Its gate-source voltage is 20V with 2.34 W thermal power dissipation.
High conversion efficiency
Low RDS(ON) – minimizes on state losses
Fast switching speed
Low RDS(ON) – minimizes on state losses
Fast switching speed
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