DiodesZetex Dual DMN3401 2 Type N-Channel MOSFET, 800 mA, 30 V Enhancement, 6-Pin SOT-363

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£12.05

(exc. VAT)

£14.45

(inc. VAT)

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Per Pack*
50 - 50£0.241£12.05
100 - 200£0.212£10.60
250 - 450£0.206£10.30
500 - 950£0.202£10.10
1000 +£0.196£9.80

*price indicative

RS Stock No.:
206-0085
Mfr. Part No.:
DMN3401LDW-7
Brand:
DiodesZetex
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Brand

DiodesZetex

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

800mA

Maximum Drain Source Voltage Vds

30V

Package Type

SOT-363

Series

DMN3401

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

700mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

0.35W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

0.5nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Transistor Configuration

Dual

Height

0.95mm

Standards/Approvals

No

Width

1.3 mm

Length

2.15mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q200, AEC-Q101, AEC-Q100

COO (Country of Origin):
CN
The DiodesZetex 30V dual N- channel enhancement mode MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power management application. Its gate-source voltage is 20 V with 0.29 W thermal power dissipation.

Low on-resistance

Low input capacitance

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