onsemi NTB N-Channel MOSFET Transistor & Diode, 19.5 A, 1200 V, 7-Pin D2PAK NTBG160N120SC1

View all MOSFETs
Bulk discount available

Subtotal 50 units (supplied on a continuous strip)*

£226.20

(exc. VAT)

£271.45

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 1,505 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
50 - 95£4.524
100 +£3.922

*price indicative

Packaging Options:
RS Stock No.:
205-2494P
Mfr. Part No.:
NTBG160N120SC1
Brand:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

19.5 A

Maximum Drain Source Voltage

1200 V

Package Type

D2PAK (TO-263)

Series

NTB

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

225 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.3V

Transistor Material

Si

Number of Elements per Chip

1

Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, D2PAK-7L


The ON Semiconductor SiC N-channel 1200V MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Continuous Drain Current rating is 19.5A
Drain to source on resistance rating is 224mohm
Ultra Low Gate Charge
High Speed Switching and Low Capacitance
100% Avalanche Tested