Vishay EF Type N-Channel Power MOSFET, 16 A, 600 V Enhancement, 3-Pin TO-220 SIHF068N60EF-GE3
- RS Stock No.:
- 204-7249
- Mfr. Part No.:
- SIHF068N60EF-GE3
- Brand:
- Vishay
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
£23.35
(exc. VAT)
£28.00
(inc. VAT)
FREE delivery for orders over £60.00
Temporarily out of stock
- Shipping from 01 March 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | £4.67 | £23.35 |
| 25 - 45 | £4.204 | £21.02 |
| 50 - 120 | £3.844 | £19.22 |
| 125 - 245 | £3.74 | £18.70 |
| 250 + | £3.648 | £18.24 |
*price indicative
- RS Stock No.:
- 204-7249
- Mfr. Part No.:
- SIHF068N60EF-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | EF | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 68mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 39W | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.6mm | |
| Length | 28.6mm | |
| Standards/Approvals | RoHS | |
| Width | 10mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series EF | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 68mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 39W | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 4.6mm | ||
Length 28.6mm | ||
Standards/Approvals RoHS | ||
Width 10mm | ||
Automotive Standard No | ||
Vishay Series EF Power MOSFET, 600V Maximum Drain Source Voltage, 16A Maximum Continuous Drain Current - SIHF068N60EF-GE3
This power MOSFET is a high-voltage N-channel switching device designed for use in power conversion and control circuits where robust voltage handling and through-hole mounting are required. It operates across a broad temperature range and is suited to applications demanding sustained drain current and controlled gate-drive characteristics, presented in a TO-220 through-hole package for conventional board assembly.
Features and Benefits:
• 600V drain voltage for high-voltage switching applications
• 16A continuous drain current for sustained load handling
• 68mΩ Rds(on) to reduce conduction losses
• 51nC typical gate charge for predictable switching control
• 39W maximum power dissipation for thermal planning
• ±30V gate tolerance to accommodate varied gate-drive amplitudes
• 16A continuous drain current for sustained load handling
• 68mΩ Rds(on) to reduce conduction losses
• 51nC typical gate charge for predictable switching control
• 39W maximum power dissipation for thermal planning
• ±30V gate tolerance to accommodate varied gate-drive amplitudes
Applications
• Suitable for industrial power converters and inverters
• Ideal for high-voltage motor drive stages
• Used for power supplies requiring through-hole mounting
• Can be used for switching elements in lighting controllers
• Suitable for test rigs and repair of legacy hardware
• Ideal for high-voltage motor drive stages
• Used for power supplies requiring through-hole mounting
• Can be used for switching elements in lighting controllers
• Suitable for test rigs and repair of legacy hardware
What temperature extremes can it tolerate during operation?
It is specified to function from -55°C up to 150°C, allowing use in environments with wide thermal variation.
How does the package aid thermal management on a populated board?
The TO-220 through-hole format permits attachment of a heatsink to its exposed tab, enabling improved dissipation up to its 39W rating when appropriately mounted.
What gate-drive considerations are necessary for switching performance?
Design should account for the 51nC gate charge when sizing drivers to achieve desired rise/fall times and switching losses at target frequencies.
What type of channel and conduction mode does it use?
It is an N-channel device operating in enhancement mode, requiring a positive gate-source drive to conduct.
Related links
- Vishay EF Type N-Channel Power MOSFET 600 V Enhancement, 3-Pin TO-220 SIHF068N60EF-GE3
- Vishay EF Type N-Channel Power MOSFET 600 V Enhancement, 3-Pin TO-220 SiHA186N60EF-GE3
- Vishay EF Type N-Channel Power MOSFET 600 V Enhancement, 3-Pin TO-263
- Vishay EF Type N-Channel Power MOSFET 600 V Enhancement, 3-Pin TO-263 SIHB125N60EF-GE3
- Vishay EF Type N-Channel Power MOSFET 600 V Enhancement, 3-Pin TO-263 SIHB155N60EF-GE3
- Vishay EF Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-220AB
- Vishay EF Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-247AC
- Vishay EF Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-247AC SIHG11N80AEF-GE3