The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties ofwide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
Very tight variation of on-resistance vs. temperature Very fast and robust intrinsic body diode Low capacitance
Attribute
Value
Channel Type
N
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
1200 V
Series
SCTH50N120-7
Package Type
H2PAK-7
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
0.065 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.1V
Number of Elements per Chip
1
Transistor Material
SiC
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