onsemi NVB SiC N-Channel MOSFET Transistor, 60 A, 1200 V, 7-Pin D2PAK NVBG040N120SC1

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Subtotal 20 units (supplied on a continuous strip)*

£263.00

(exc. VAT)

£315.60

(inc. VAT)

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20 - 198£13.15
200 +£11.40

*price indicative

Packaging Options:
RS Stock No.:
202-5731P
Mfr. Part No.:
NVBG040N120SC1
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

1200 V

Series

NVB

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

0.056 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.3V

Number of Elements per Chip

1

Transistor Material

SiC

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, D2PAK−7L Silicon Carbide MOSFET, N-Channel, 1200 V, 40 mΩ, D2PAK-7L


The ON Semiconductor Silicon Carbide Power MOSFET runs with 60 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter applications.

AEC Q101 qualified
Production part approval process Capable
100% avalanche tested
Low effective output capacitance