onsemi N-Channel NTTF 1 Type N-Channel MOSFET, 60 A, 40 V Enhancement, 12-Pin WQFN NTTFD4D0N04HLTWG
- RS Stock No.:
- 202-5718
- Mfr. Part No.:
- NTTFD4D0N04HLTWG
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 25 units)*
£22.875
(exc. VAT)
£27.45
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 8,975 unit(s), ready to ship
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 75 | £0.915 | £22.88 |
| 100 - 225 | £0.788 | £19.70 |
| 250 + | £0.684 | £17.10 |
*price indicative
- RS Stock No.:
- 202-5718
- Mfr. Part No.:
- NTTFD4D0N04HLTWG
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | WQFN | |
| Series | NTTF | |
| Mount Type | Surface | |
| Pin Count | 12 | |
| Maximum Drain Source Resistance Rds | 4.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Maximum Power Dissipation Pd | 26W | |
| Forward Voltage Vf | 0.78V | |
| Transistor Configuration | N-Channel | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.3 mm | |
| Standards/Approvals | RoHS Compliant | |
| Height | 0.75mm | |
| Length | 3.3mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type WQFN | ||
Series NTTF | ||
Mount Type Surface | ||
Pin Count 12 | ||
Maximum Drain Source Resistance Rds 4.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Maximum Power Dissipation Pd 26W | ||
Forward Voltage Vf 0.78V | ||
Transistor Configuration N-Channel | ||
Maximum Operating Temperature 150°C | ||
Width 3.3 mm | ||
Standards/Approvals RoHS Compliant | ||
Height 0.75mm | ||
Length 3.3mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
The ON Semiconductor Symmetrical Dual N-Channel MOSFET includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. It is used in Computing, Communications, General purpose point of load applications.
Low inductance packaging
Lower switching losses
RoHS compliant
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