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Infineon IQF Type N-Channel Power Transistor, 451 A, 40 V Enhancement, 12-Pin PG-TSON-12 IQFH55N04NM6ATMA1

RS Stock No.:: 349-390
Mfr. Part No.:: IQFH55N04NM6ATMA1
Brand:: Infineon

Infineon IQF Type N-Channel Power Transistor, 451 A, 40 V Enhancement, 12-Pin PG-TSON-12 IQFH55N04NM6ATMA1

Bulk discount available

Subtotal (1 pack of 2 units)*

£8.29

(exc. VAT)

£9.948

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

3,000 unit(s) ready to ship

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
2 - 18	£4.145	£8.29
20 - 198	£3.73	£7.46
200 - 998	£3.44	£6.88
1000 - 1998	£3.195	£6.39
2000 +	£2.86	£5.72

*price indicative

RS Stock No.:: 349-390
Mfr. Part No.:: IQFH55N04NM6ATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	Power Transistor
	Maximum Continuous Drain Current Id	451A
	Maximum Drain Source Voltage Vds	40V
	Package Type	PG-TSON-12
	Series	IQF
	Mount Type	Surface
	Pin Count	12
	Maximum Drain Source Resistance Rds	0.55mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	214W
	Typical Gate Charge Qg @ Vgs	118nC
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1V
	Maximum Operating Temperature	175°C
	Standards/Approvals	IEC61249-2-21, JEDEC, RoHS
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type Power Transistor
	Maximum Continuous Drain Current Id 451A
	Maximum Drain Source Voltage Vds 40V
	Package Type PG-TSON-12
	Series IQF
	Mount Type Surface
	Pin Count 12
	Maximum Drain Source Resistance Rds 0.55mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 214W
	Typical Gate Charge Qg @ Vgs 118nC
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1V
	Maximum Operating Temperature 175°C
	Standards/Approvals IEC61249-2-21, JEDEC, RoHS
	Automotive Standard No

Datasheet - IQFH55N04NM6ATMA1

COO (Country of Origin):: MY

The Infineon OptiMOS 6 Power Transistor, 40 V is specifically optimized for low voltage drive applications and battery powered systems, making it ideal for energy efficient designs. It is also optimized for synchronous applications, ensuring enhanced performance. The MOSFET features very low on-resistance (RDS(on)), minimizing conduction losses for improved efficiency. Additionally, it is 100% avalanche tested, ensuring reliable performance under demanding conditions.

Superior thermal resistance

N channel

Pb free lead plating and RoHS compliant

Halogen free according to IEC61249-2-21