onsemi NTH Type N-Channel MOSFET, 84 A, 1200 V Enhancement, 4-Pin TO-247 NTH4L020N120SC1
- RS Stock No.:
- 202-5697
- Mfr. Part No.:
- NTH4L020N120SC1
- Brand:
- onsemi
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Subtotal (1 unit)*
£17.56
(exc. VAT)
£21.07
(inc. VAT)
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Last RS stock
- Final 174 unit(s), ready to ship
Units | Per unit |
|---|---|
| 1 - 9 | £17.56 |
| 10 - 99 | £15.14 |
| 100 + | £13.12 |
*price indicative
- RS Stock No.:
- 202-5697
- Mfr. Part No.:
- NTH4L020N120SC1
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 84A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Series | NTH | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 28mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 3.7V | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Typical Gate Charge Qg @ Vgs | 220nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 510W | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.2 mm | |
| Standards/Approvals | No | |
| Length | 18.62mm | |
| Height | 15.2mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 84A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Series NTH | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 28mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 3.7V | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Typical Gate Charge Qg @ Vgs 220nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 510W | ||
Maximum Operating Temperature 175°C | ||
Width 5.2 mm | ||
Standards/Approvals No | ||
Length 18.62mm | ||
Height 15.2mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 102 Ampere and 1200 Volts. It can be used in uninterruptible power supply, DC or DC converter, Boost inverter.
20mO drain to source on resistance
Ultra low gate charge
100% avalanche tested
Pb free
RoHS compliant
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