STMicroelectronics SCT Type N-Channel MOSFET, 100 A, 1200 V Depletion, 7-Pin H2PAK

Subtotal (1 tube of 30 units)*

£673.56

(exc. VAT)

£808.26

(inc. VAT)

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Units
Per unit
Per Tube*
30 +£22.452£673.56

*price indicative

RS Stock No.:
202-5485
Mfr. Part No.:
SCTW100N65G2AG
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

1200V

Series

SCT

Package Type

H2PAK

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

0.105Ω

Channel Mode

Depletion

Maximum Power Dissipation Pd

420W

Typical Gate Charge Qg @ Vgs

162nC

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

2.8V

Maximum Operating Temperature

200°C

Standards/Approvals

No

Length

15.75mm

Width

5.15 mm

Height

34.95mm

Automotive Standard

No

The STMicroelectronics automotive-grade silicon carbide power MOSFET has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.

Very fast and robust intrinsic body diode

Low capacitance

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