STMicroelectronics SCT SiC N-Channel MOSFET Module, 12 A, 1200 V Depletion, 3-Pin HiP247 SCT10N120

Bulk discount available

Subtotal (1 unit)*

£6.96

(exc. VAT)

£8.35

(inc. VAT)

Add to Basket
Select or type quantity
Last RS stock
  • Final 7 unit(s), ready to ship
Units
Per unit
1 - 4£6.96
5 - 9£6.49
10 +£6.34

*price indicative

Packaging Options:
RS Stock No.:
202-5476
Mfr. Part No.:
SCT10N120
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

1200 V

Package Type

HiP247

Series

SCT

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.58 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

Transistor Material

SiC

The STMicroelectronics silicon carbide power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.

Very fast and robust intrinsic body diode
Low capacitance

Related links