onsemi N-Channel MOSFET, 337 A, 80 V, 8-Pin DFN NVMTS1D2N08H

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Packaging Options:
RS Stock No.:
195-2677
Mfr. Part No.:
NVMTS1D2N08H
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

337 A

Maximum Drain Source Voltage

80 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Width

8mm

Length

8.1mm

Typical Gate Charge @ Vgs

147 nC @ 10 V

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Height

1.15mm

Automotive Standard

AEC-Q101

Automotive Power MOSFET in a 8x8mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank capable for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.

Small Footprint (8x8 mm)
Compact Design
Low RDS(on)
Minimize Conduction Losses
Low QG and Capacitance
Minimize Driver Losses
Wettable Flank Option
Enhanced Optical Inspection
PPAP Capable
Application
Reverser Battery protection
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)

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