onsemi N-Channel MOSFET, 313 A, 40 V, 8-Pin DFN NTMFSC0D9N04CL

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Subtotal (1 reel of 3000 units)*

£1,902.00

(exc. VAT)

£2,283.00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +£0.634£1,902.00

*price indicative

RS Stock No.:
195-2663
Mfr. Part No.:
NTMFSC0D9N04CL
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

313 A

Maximum Drain Source Voltage

40 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

850 μΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

167 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Typical Gate Charge @ Vgs

143 @ 10 V nC

Width

5mm

Number of Elements per Chip

1

Length

5.9mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

0.95mm

Forward Diode Voltage

1.2V

This N-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.

Top and bottom sided exposed in standard 5x6mm pin-out
Improved thermal dissipation through top and bottom side of the package
Ultra low RDS-on
Reduced conduction loss
Reduced capacitances and package inductance
Reduced switching loss
Application
Synchronous Rectifier in AC-DC and DC-DC power supplies
Motor Switch
Load switch

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