onsemi N-Channel MOSFET, 138 A, 40 V, 4-Pin LFPAK, SOT-669 NTMYS2D4N04CTWG

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Subtotal (1 reel of 3000 units)*

£1,815.00

(exc. VAT)

£2,178.00

(inc. VAT)

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RS Stock No.:
195-2510
Mfr. Part No.:
NTMYS2D4N04CTWG
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

138 A

Maximum Drain Source Voltage

40 V

Package Type

LFPAK, SOT-669

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

2.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

32 nC @ 10 V

Width

4.25mm

Length

5mm

Maximum Operating Temperature

+175 °C

Height

1.15mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Industrial Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance.

Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK4 Package, Industry Standard
These Devices are Pb−Free

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