onsemi N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-247 NTHL190N65S3HF
- RS Stock No.:
- 189-0461P
- Mfr. Part No.:
- NTHL190N65S3HF
- Brand:
- onsemi
Subtotal 5 units (supplied in a tube)*
£24.05
(exc. VAT)
£28.85
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 999,999,995 unit(s) shipping from 20 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 5 + | £4.81 |
*price indicative
- RS Stock No.:
- 189-0461P
- Mfr. Part No.:
- NTHL190N65S3HF
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 20 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 190 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 162 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Length | 15.87mm | |
| Typical Gate Charge @ Vgs | 34 nC @ 10 V | |
| Width | 4.82mm | |
| Height | 20.82mm | |
| Forward Diode Voltage | 1.3V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 190 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 162 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Length 15.87mm | ||
Typical Gate Charge @ Vgs 34 nC @ 10 V | ||
Width 4.82mm | ||
Height 20.82mm | ||
Forward Diode Voltage 1.3V | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.
700 V @ TJ = 150 °C
Ultra Low Gate Charge (Typ. Qg = 35 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 467 pF)
Excellent body diode performance (low Qrr, robust body diode)
Optimized Capacitance
Typ. RDS(on) = 161 mΩ
Benefits
Higher system reliability at low temperature operation
Lower switching loss
Higher system reliability in LLC and Phase shift full bridge circuit
Lower peak Vds and lower Vgs oscillation
Applications
Telecommunication
Cloud system
Industrial
End Products
Telecom power
Server power
EV charger
Solar / UPS
Ultra Low Gate Charge (Typ. Qg = 35 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 467 pF)
Excellent body diode performance (low Qrr, robust body diode)
Optimized Capacitance
Typ. RDS(on) = 161 mΩ
Benefits
Higher system reliability at low temperature operation
Lower switching loss
Higher system reliability in LLC and Phase shift full bridge circuit
Lower peak Vds and lower Vgs oscillation
Applications
Telecommunication
Cloud system
Industrial
End Products
Telecom power
Server power
EV charger
Solar / UPS